Journal Article

PUBDB-2014-04168

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Ultrathin, epitaxial cerium dioxide on silicon

Flege, J. I. (Corresponding Author)Extern* ; Kaemena, B. ; Höcker, J.Extern* ; Bertram, F.Extern* ; Wollschläger, J.Extern* ; Schmidt, T.Extern* ; Falta, J.Extern*

2014
American Inst. of Physics Melville, NY

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Please use a persistent id in citations: doi:10.1063/1.4870585

Abstract: It is shown that ultrathin, highly ordered, continuous films of cerium dioxide may be prepared on silicon following substrate prepassivation using an atomic layer of chlorine. The as-deposited, few-nanometer-thin Ce2O3 film may very effectively be converted at room temperature to almost fully oxidized CeO2 by simple exposure to air, as demonstrated by hard X-ray photoemission spectroscopy and X-ray diffraction. This post-oxidation process essentially results in a negligible loss in film crystallinity and interface abruptness.

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Contributing Institute(s):

1. DOOR-User (DOOR)

Research Program(s):

1. DORIS Beamline BW1 (POF2-54G13) (POF2-54G13)
2. DORIS Beamline BW2 (POF2-54G13) (POF2-54G13)

Experiment(s):

1. DORIS Beamline BW1 (DORIS III)
2. DORIS Beamline BW2 (DORIS III)

Appears in the scientific report 2014

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Database coverage:
; ; ; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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