TY  - JOUR
AU  - Flege, Jan Ingo
AU  - Kaemena, Björn
AU  - Höcker, Jan
AU  - Bertram, Florian
AU  - Wollschläger, Joachim
AU  - Schmidt, Thomas
AU  - Falta, Jens
TI  - Ultrathin, epitaxial cerium dioxide on silicon
JO  - Applied physics letters
VL  - 104
IS  - 13
SN  - 1077-3118
CY  - Melville, NY
PB  - American Inst. of Physics
M1  - PUBDB-2014-04168
SP  - 131604
PY  - 2014
AB  - It is shown that ultrathin, highly ordered, continuous films of cerium dioxide may be prepared on silicon following substrate prepassivation using an atomic layer of chlorine. The as-deposited, few-nanometer-thin Ce2O3 film may very effectively be converted at room temperature to almost fully oxidized CeO2 by simple exposure to air, as demonstrated by hard X-ray photoemission spectroscopy and X-ray diffraction. This post-oxidation process essentially results in a negligible loss in film crystallinity and interface abruptness.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000334408500016
DO  - DOI:10.1063/1.4870585
UR  - https://bib-pubdb1.desy.de/record/192586
ER  -