%0 Journal Article
%A Flege, Jan Ingo
%A Kaemena, Björn
%A Höcker, Jan
%A Bertram, Florian
%A Wollschläger, Joachim
%A Schmidt, Thomas
%A Falta, Jens
%T Ultrathin, epitaxial cerium dioxide on silicon
%J Applied physics letters
%V 104
%N 13
%@ 1077-3118
%C Melville, NY
%I American Inst. of Physics
%M PUBDB-2014-04168
%P 131604
%D 2014
%X It is shown that ultrathin, highly ordered, continuous films of cerium dioxide may be prepared on silicon following substrate prepassivation using an atomic layer of chlorine. The as-deposited, few-nanometer-thin Ce2O3 film may very effectively be converted at room temperature to almost fully oxidized CeO2 by simple exposure to air, as demonstrated by hard X-ray photoemission spectroscopy and X-ray diffraction. This post-oxidation process essentially results in a negligible loss in film crystallinity and interface abruptness.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000334408500016
%R 10.1063/1.4870585
%U https://bib-pubdb1.desy.de/record/192586