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@ARTICLE{Flege:192586,
author = {Flege, Jan Ingo and Kaemena, Björn and Höcker, Jan and
Bertram, Florian and Wollschläger, Joachim and Schmidt,
Thomas and Falta, Jens},
title = {{U}ltrathin, epitaxial cerium dioxide on silicon},
journal = {Applied physics letters},
volume = {104},
number = {13},
issn = {1077-3118},
address = {Melville, NY},
publisher = {American Inst. of Physics},
reportid = {PUBDB-2014-04168},
pages = {131604},
year = {2014},
abstract = {It is shown that ultrathin, highly ordered, continuous
films of cerium dioxide may be prepared on silicon following
substrate prepassivation using an atomic layer of chlorine.
The as-deposited, few-nanometer-thin Ce2O3 film may very
effectively be converted at room temperature to almost fully
oxidized CeO2 by simple exposure to air, as demonstrated by
hard X-ray photoemission spectroscopy and X-ray diffraction.
This post-oxidation process essentially results in a
negligible loss in film crystallinity and interface
abruptness.},
cin = {DOOR},
ddc = {530},
cid = {I:(DE-H253)HAS-User-20120731},
pnm = {DORIS Beamline BW1 (POF2-54G13) / DORIS Beamline BW2
(POF2-54G13)},
pid = {G:(DE-H253)POF2-BW1-20130405 /
G:(DE-H253)POF2-BW2-20130405},
experiment = {EXP:(DE-H253)D-BW1-20150101 / EXP:(DE-H253)D-BW2-20150101},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000334408500016},
doi = {10.1063/1.4870585},
url = {https://bib-pubdb1.desy.de/record/192586},
}