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Journal Article | PUBDB-2025-01592 |
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2025
Elsevier
Amsterdam
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Please use a persistent id in citations: doi:10.1016/j.omx.2024.100392 doi:10.3204/PUBDB-2025-01592
Abstract: This study explores the synthesis and luminescent properties of europium-doped gallium oxide (Ga$_2$O$_3$:Eu) ceramics fabricated via electron beam-assisted synthesis (EBAS) at 1.4 MeV. The resulting Ga$_2$O$_3$:Eu ceramicsexhibit a nanocrystalline structure with an average crystallite size of ~30 nm, high crystallinity, and minimal lattice strain (<0.5 %). Luminescence analysis from 4 K to 300 K reveals both intrinsic and europium-induced emissions. While intrinsic Ga$_2$O$_3$ emission exhibits thermal quenching above 100 K, Eu$^{3+}$-related emissions, notably the 611 nm red emission, show thermal stability, retaining ~90 % of their intensity at 300 K. Additionally, a novel low-temperature emission peak at 1.74 eV, potentially associated with electron beam-induced defects, was detected, meriting further exploration. These findings indicate that Ga$_2$O$_3$:Eu ceramics synthesized via EBAS hold promise for optoelectronic, radiation detection, and high-temperature applications, given their rapid production and enhanced thermal stability.
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