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@ARTICLE{Kumarbekov:627275,
author = {Kumarbekov, Kuat K. and Kakimov, Askhat B. and Karipbayev,
Zhakyp and Kassymzhanov, Murat T. and Brik, Mikhail G. and
Ma, Chong-geng and Piasecki, Michał and Suchikova, Yana and
Kemere, Meldra and Konuhova, Marina},
title = {{T}emperature-dependent luminescence of europium-doped
{G}a$_2${O}$_3$ ceramics},
journal = {Optical materials: X},
volume = {25},
issn = {2590-1478},
address = {Amsterdam},
publisher = {Elsevier},
reportid = {PUBDB-2025-01592},
pages = {100392},
year = {2025},
abstract = {This study explores the synthesis and luminescent
properties of europium-doped gallium oxide (Ga$_2$O$_3$:Eu)
ceramics fabricated via electron beam-assisted synthesis
(EBAS) at 1.4 MeV. The resulting Ga$_2$O$_3$:Eu
ceramicsexhibit a nanocrystalline structure with an average
crystallite size of ~30 nm, high crystallinity, and minimal
lattice strain (<0.5 \%). Luminescence analysis from 4 K to
300 K reveals both intrinsic and europium-induced emissions.
While intrinsic Ga$_2$O$_3$ emission exhibits thermal
quenching above 100 K, Eu$^{3+}$-related emissions, notably
the 611 nm red emission, show thermal stability, retaining
~90 \% of their intensity at 300 K. Additionally, a novel
low-temperature emission peak at 1.74 eV, potentially
associated with electron beam-induced defects, was detected,
meriting further exploration. These findings indicate that
Ga$_2$O$_3$:Eu ceramics synthesized via EBAS hold promise
for optoelectronic, radiation detection, and
high-temperature applications, given their rapid production
and enhanced thermal stability.},
cin = {DOOR ; HAS-User},
ddc = {530},
cid = {I:(DE-H253)HAS-User-20120731},
pnm = {6G3 - PETRA III (DESY) (POF4-6G3) / FS-Proposal: I-20231138
(I-20231138)},
pid = {G:(DE-HGF)POF4-6G3 / G:(DE-H253)I-20231138},
experiment = {EXP:(DE-H253)P-P66-20150101},
typ = {PUB:(DE-HGF)16},
doi = {10.1016/j.omx.2024.100392},
url = {https://bib-pubdb1.desy.de/record/627275},
}