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000627275 1001_ $$0P:(DE-H253)PIP1106428$$aKumarbekov, Kuat K.$$b0
000627275 245__ $$aTemperature-dependent luminescence of europium-doped Ga$_2$O$_3$ ceramics
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000627275 520__ $$aThis study explores the synthesis and luminescent properties of europium-doped gallium oxide (Ga$_2$O$_3$:Eu) ceramics fabricated via electron beam-assisted synthesis (EBAS) at 1.4 MeV. The resulting Ga$_2$O$_3$:Eu ceramicsexhibit a nanocrystalline structure with an average crystallite size of ~30 nm, high crystallinity, and minimal lattice strain (<0.5 %). Luminescence analysis from 4 K to 300 K reveals both intrinsic and europium-induced emissions. While intrinsic Ga$_2$O$_3$ emission exhibits thermal quenching above 100 K, Eu$^{3+}$-related emissions, notably the 611 nm red emission, show thermal stability, retaining ~90 % of their intensity at 300 K. Additionally, a novel low-temperature emission peak at 1.74 eV, potentially associated with electron beam-induced defects, was detected, meriting further exploration. These findings indicate that Ga$_2$O$_3$:Eu ceramics synthesized via EBAS hold promise for optoelectronic, radiation detection, and high-temperature applications, given their rapid production and enhanced thermal stability.
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000627275 7001_ $$0P:(DE-H253)PIP1109444$$aKakimov, Askhat B.$$b1$$eCorresponding author
000627275 7001_ $$0P:(DE-H253)PIP1105936$$aKaripbayev, Zhakyp$$b2$$eCorresponding author
000627275 7001_ $$0P:(DE-HGF)0$$aKassymzhanov, Murat T.$$b3
000627275 7001_ $$0P:(DE-HGF)0$$aBrik, Mikhail G.$$b4
000627275 7001_ $$0P:(DE-HGF)0$$aMa, Chong-geng$$b5
000627275 7001_ $$0P:(DE-HGF)0$$aPiasecki, Michał$$b6
000627275 7001_ $$0P:(DE-HGF)0$$aSuchikova, Yana$$b7
000627275 7001_ $$0P:(DE-H253)PIP1107296$$aKemere, Meldra$$b8
000627275 7001_ $$0P:(DE-H253)PIP1109417$$aKonuhova, Marina$$b9
000627275 773__ $$0PERI:(DE-600)2965606-0$$a10.1016/j.omx.2024.100392$$gVol. 25, p. 100392 -$$p100392 $$tOptical materials: X$$v25$$x2590-1478$$y2025
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