Journal Article PUBDB-2015-01832

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Crystallization dynamics and interface stability of strontium titanate thin films on silicon

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2015
Munksgaard Copenhagen

Seminar, GermanyGermany, Journal of applied crystallography 48(2), 393 - 400 () [10.1107/S160057671500240X]
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Abstract: Different physical vapor deposition methods have been used to fabricate strontium titanate thin films. Within the binary phase diagram of SrO and TiO2 the stoichiometry ranges from Ti rich to Sr rich, respectively. The crystallization of these amorphous SrTiO3 layers is investigated by in situ grazing-incidence X-ray diffraction using synchrotron radiation. The crystallization dynamics and evolution of the lattice constants as well as crystallite sizes of the SrTiO3 layers were determined for temperatures up to 1223 K under atmospheric conditions applying different heating rates. At approximately 473 K, crystallization of perovskite-type SrTiO3 is initiated for Sr-rich electron beam evaporated layers, whereas Sr-depleted sputter-deposited thin films crystallize at 739 K. During annealing, a significant diffusion of Si from the substrate into the SrTiO3 layers occurs in the case of Sr-rich composition. This leads to the formation of secondary silicate phases which are observed by X-ray diffraction, transmission electron microscopy and X-ray photoelectron spectroscopy.

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Note: OA

Contributing Institute(s):
  1. DOOR-User (DOOR)
  2. externe Institute im Bereich Photon Science (TUFreib)
  3. PETRA III Extension (FS-PEX)
Research Program(s):
  1. 6213 - Materials and Processes for Energy and Transport Technologies (POF3-621) (POF3-621)
Experiment(s):
  1. DORIS Beamline E2 (DORIS III)

Appears in the scientific report 2015
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Medline ; OpenAccess ; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; NCBI Molecular Biology Database ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection
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 Record created 2015-04-09, last modified 2025-07-17


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