Journal Article

PUBDB-2015-01275

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png A Hard Oxide Semiconductor with A Direct and Narrow Bandgap and Switchable p–n Electrical Conduction

Ovsyannikov, S. (Corresponding Author)>Extern* ; Karkin, A. E. ; Morozova, N. V. ; Shchennikov, V. V. ; Bykova, E.>Extern* ; Abakumov, A. M. ; Tsirlin, A.>Extern* ; Glazyrin, K.DESY* ; Dubrovinsky, L.>Extern*

2014
Wiley-VCH Weinheim

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Please use a persistent id in citations: doi:10.1002/adma.201403304

Abstract: An oxide semiconductor (perovskite-type Mn2O3) is reported which has a narrow and direct bandgap of 0.45 eV and a high Vickers hardness of 15 GPa. All the known materials with similar electronic band structures (e.g., InSb, PbTe, PbSe, PbS, and InAs) play crucial roles in the semiconductor industry. The perovskite-type Mn2O3 described is much stronger than the above semiconductors and may find useful applications in different semiconductor devices, e.g., in IR detectors.

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Contributing Institute(s):

1. DOOR-User (DOOR)
2. Experimentebetreuung PETRA III (FS-PE)

Research Program(s):

1. FS In-house research / external facilities (POF2-544) (POF2-544)

Experiment(s):

1. Measurement at external facility

Appears in the scientific report 2014

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Database coverage:
; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; IF >= 15 ; JCR ; NCBI Molecular Biology Database ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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