TY  - JOUR
AU  - Ovsyannikov, Sergey
AU  - Karkin, Alexander E.
AU  - Morozova, Natalia V.
AU  - Shchennikov, Vladimir V.
AU  - Bykova, Elena
AU  - Abakumov, Artem M.
AU  - Tsirlin, Alexander
AU  - Glazyrin, Konstantin
AU  - Dubrovinsky, Leonid
TI  - A Hard Oxide Semiconductor with A Direct and Narrow Bandgap and Switchable p–n Electrical Conduction
JO  - Advanced materials
VL  - 26
IS  - 48
SN  - 0935-9648
CY  - Weinheim
PB  - Wiley-VCH
M1  - PUBDB-2015-01275
SP  - 8185 - 8191
PY  - 2014
AB  - An oxide semiconductor (perovskite-type Mn2O3) is reported which has a narrow and direct bandgap of 0.45 eV and a high Vickers hardness of 15 GPa. All the known materials with similar electronic band structures (e.g., InSb, PbTe, PbSe, PbS, and InAs) play crucial roles in the semiconductor industry. The perovskite-type Mn2O3 described is much stronger than the above semiconductors and may find useful applications in different semiconductor devices, e.g., in IR detectors.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000346480800016
C6  - pmid:25348375
DO  - DOI:10.1002/adma.201403304
UR  - https://bib-pubdb1.desy.de/record/207292
ER  -