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@ARTICLE{Ovsyannikov:207292,
author = {Ovsyannikov, Sergey and Karkin, Alexander E. and Morozova,
Natalia V. and Shchennikov, Vladimir V. and Bykova, Elena
and Abakumov, Artem M. and Tsirlin, Alexander and Glazyrin,
Konstantin and Dubrovinsky, Leonid},
title = {{A} {H}ard {O}xide {S}emiconductor with {A} {D}irect and
{N}arrow {B}andgap and {S}witchable p–n {E}lectrical
{C}onduction},
journal = {Advanced materials},
volume = {26},
number = {48},
issn = {0935-9648},
address = {Weinheim},
publisher = {Wiley-VCH},
reportid = {PUBDB-2015-01275},
pages = {8185 - 8191},
year = {2014},
abstract = {An oxide semiconductor (perovskite-type Mn2O3) is reported
which has a narrow and direct bandgap of 0.45 eV and a high
Vickers hardness of 15 GPa. All the known materials with
similar electronic band structures (e.g., InSb, PbTe, PbSe,
PbS, and InAs) play crucial roles in the semiconductor
industry. The perovskite-type Mn2O3 described is much
stronger than the above semiconductors and may find useful
applications in different semiconductor devices, e.g., in IR
detectors.},
cin = {DOOR / FS-PE},
ddc = {540},
cid = {I:(DE-H253)HAS-User-20120731 / I:(DE-H253)FS-PE-20120731},
pnm = {FS In-house research / external facilities (POF2-544)},
pid = {G:(DE-H253)POF2-Other-Beam-20130405},
experiment = {EXP:(DE-MLZ)External-20140101},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000346480800016},
pubmed = {pmid:25348375},
doi = {10.1002/adma.201403304},
url = {https://bib-pubdb1.desy.de/record/207292},
}