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000207292 1001_ $$0P:(DE-H253)PIP1016544$$aOvsyannikov, Sergey$$b0$$eCorresponding Author
000207292 245__ $$aA Hard Oxide Semiconductor with A Direct and Narrow Bandgap and Switchable p–n Electrical Conduction
000207292 260__ $$aWeinheim$$bWiley-VCH$$c2014
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000207292 520__ $$aAn oxide semiconductor (perovskite-type Mn2O3) is reported which has a narrow and direct bandgap of 0.45 eV and a high Vickers hardness of 15 GPa. All the known materials with similar electronic band structures (e.g., InSb, PbTe, PbSe, PbS, and InAs) play crucial roles in the semiconductor industry. The perovskite-type Mn2O3 described is much stronger than the above semiconductors and may find useful applications in different semiconductor devices, e.g., in IR detectors.
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000207292 7001_ $$0P:(DE-HGF)0$$aKarkin, Alexander E.$$b1
000207292 7001_ $$0P:(DE-HGF)0$$aMorozova, Natalia V.$$b2
000207292 7001_ $$0P:(DE-HGF)0$$aShchennikov, Vladimir V.$$b3
000207292 7001_ $$0P:(DE-H253)PIP1015382$$aBykova, Elena$$b4
000207292 7001_ $$0P:(DE-HGF)0$$aAbakumov, Artem M.$$b5
000207292 7001_ $$0P:(DE-H253)PIP1014467$$aTsirlin, Alexander$$b6
000207292 7001_ $$0P:(DE-H253)PIP1019654$$aGlazyrin, Konstantin$$b7$$udesy
000207292 7001_ $$0P:(DE-H253)PIP1014493$$aDubrovinsky, Leonid$$b8
000207292 773__ $$0PERI:(DE-600)1474949-x$$a10.1002/adma.201403304$$gVol. 26, no. 48, p. 8185 - 8191$$n48$$p8185 - 8191$$tAdvanced materials$$v26$$x0935-9648$$y2014
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