Identifier | G:(DE-H253)II-20060180-EC |
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Journal Article
Phase separation and exchange biasing in the ferromagnetic IV-VI semiconductor $Ge_{1-x}Mn_xTe$
Applied physics letters 97, 023101 (2010) [10.1063/1.3459149]
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Combined Structural and Photoluminescence Study of SiGe Islands on Si Substrates: Comparison with Realistic Energy Level Calculations
New journal of physics 11(6), 063021 (2009) [10.1088/1367-2630/11/6/063021]
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Contribution to a book
Diffuse x-ray scattering from semiconductor nanostructures
Diffuse Scattering and the Fundamental Properties of Materials
Diffuse Scattering and the Fundamental Properties of Materials 35-62 (2009)
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3D SiGe quantum dot crsytals: structural characterization and electronic coupling
International journal of modern physics / B 23, 2836-2841 (2009) [10.1142/S0217979209062414]
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Journal Article
X-ray diffraction as a local probe tool
ChemPhysChem 10, 2923-2930 (2009) [10.1002/cphc.200900563]
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Journal Article
Interdiffusion in Ge rich SiGe/Ge multilayers studied by in situ diffraction
Physica status solidi / A 206, 1775-1779 (2009) [10.1002/pssa.200881595]
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Journal Article
Vermessung einzelner Nanoinseln.
Physik in unserer Zeit 1, 46-51 (2009) [10.1002/piuz.200801189]
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Journal Article
Raman spectroscopy determination of composition and strain in $Si_{1-x}Ge_x$/Si heterostructures
Materials science in semiconductor processing 11, 279-284 (2008) [10.1016/j.mssp.2008.09.012]
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Journal Article
MBE growth conditions for Si island formation on Ge (001) substrates
Thin solid films 517, 62-64 (2008) [10.1016/j.tsf.2008.08.152]
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Journal Article
X-ray scattering from periodic arrays of quantum dots
Journal of physics / Condensed matter 20, 454215 (2008) [10.1088/0953-8984/20/45/454215]
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All known publications ...
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