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@ARTICLE{Brehm:93929,
      author       = {Brehm, M. and Suzuki, T. and Fromherz, T. and Zhong, Z. and
                      Hrauda, N. and Hackl, F. and Stangl, J. and Schäffler, F.
                      and Bauer, G. and DESY},
      title        = {{C}ombined {S}tructural and {P}hotoluminescence {S}tudy of
                      {S}i{G}e {I}slands on {S}i {S}ubstrates: {C}omparison with
                      {R}ealistic {E}nergy {L}evel {C}alculations},
      journal      = {New journal of physics},
      volume       = {11},
      number       = {6},
      issn         = {1367-2630},
      address      = {London},
      publisher    = {RSC},
      reportid     = {PHPPUBDB-12811},
      pages        = {063021},
      year         = {2009},
      abstract     = {The Stranski–Krastanow growth of SiGe islands by
                      deposition of SiGe alloys instead of pure Ge allows us to
                      control both the Ge concentration and gradient in the
                      islands. In contrast to the commonly found increasing Ge
                      content with island height, growth conditions for islands
                      with nearly constant and even decreasing Ge profile along
                      the growth direction were found. Atomic force microscopy,
                      transmission electron microscopy and high-resolution x-ray
                      diffraction were employed to determine the islands' size,
                      shape, lateral distance and Ge composition. Efficient
                      photoluminescence is emitted from these islands. We show
                      that for islands with higher Ge contents at the bottom than
                      at the apex, transitions between heavy holes and electron
                      $Δ_{xy}$ states in the compressive Si regions around the
                      island's circumference dominate the photoluminescence
                      spectra instead of the usually observed recombination
                      between heavy holes and electrons in the $Δ_z$ valleys in
                      the tensile Si above the island's apex. The relative
                      importance of the $Δ_{xy}$ transitions is enhanced for
                      lateral island distances less than 10 nm, where
                      overlapping strain fields of neighbouring islands increase
                      the compressive strain in the Si region between them. At
                      intense photoexcitation, recombinations between electrons in
                      the $Δ_z$ valleys and light holes within the islands appear
                      in the photoluminescence spectra. These so far, for SiGe
                      islands, unobserved transitions were identified by a
                      quantitative modelling of the band structure within the
                      islands and in the surrounding Si matrix based on full 3D
                      simulations using the nextnano$^3$ package with the
                      experimentally obtained island shape and composition as
                      input parameters.},
      cin          = {HASYLAB(-2012)},
      ddc          = {540},
      cid          = {$I:(DE-H253)HASYLAB_-2012_-20130307$},
      pnm          = {DORIS Beamline D4 (POF1-550) / DORIS Beamline BW2
                      (POF1-550) / FS-Proposal: II-20060180 EC (II-20060180-EC)},
      pid          = {G:(DE-H253)POF1-D4-20130405 / G:(DE-H253)POF1-BW2-20130405
                      / G:(DE-H253)II-20060180-EC},
      experiment   = {EXP:(DE-H253)D-D4-20150101 / EXP:(DE-H253)D-BW2-20150101},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000267076400007},
      doi          = {10.1088/1367-2630/11/6/063021},
      url          = {https://bib-pubdb1.desy.de/record/93929},
}