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| Home > Publications database > Influence of X-ray irradiation on the properties of the Hamamatsu silicon photomultiplier S10362-11-050C |
| Journal Article | PUBDB-2014-03702 |
; ; ;
2014
North-Holland Publ. Co.
Amsterdam
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Please use a persistent id in citations: doi:10.1016/j.nima.2014.05.112
Abstract: We have investigated the effects of X-ray irradiation to doses of 0, 200 Gy, 20 kGy, 2 MGy, and 20 MGy on the Hamamatsu silicon-photomultiplier (SiPM) S10362-11-050C. The SiPMs were irradiated without applied bias voltage. From current-voltage, capacitance/conductance-voltage, -frequency, pulse-shape, and pulse-area measurements, the SiPM characteristics below and above breakdown voltage were determined. Significant changes of some SiPM parameters are observed. Up to a dose of 20 kGy the performance of the SiPMs is hardly affected by X-ray radiation damage. For doses of 2 and 20 MGy the SiPMs operate with hardly any change in gain, but with a significant increase in dark-count rate and cross-talk probability.
Keyword(s): photomultiplier: silicon ; X-ray: irradiation ; radiation: damage ; performance ; photomultiplier: design ; stability ; semiconductor: conductivity ; ionization: yield
; Current Contents - Life Sciences ; Current Contents - Physical, Chemical and Earth Sciences ; JCR ; Nationallizenz
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