TY  - JOUR
AU  - Xu, Chen
AU  - Klanner, Robert
AU  - Garutti, Erika
AU  - Hellweg, Wolf-Lukas
TI  - Influence of X-ray irradiation on the properties of the Hamamatsu silicon photomultiplier S10362-11-050C
JO  - Nuclear instruments & methods in physics research / A
VL  - 762
SN  - 0168-9002
CY  - Amsterdam
PB  - North-Holland Publ. Co.
M1  - PUBDB-2014-03702
SP  - 149 - 161
PY  - 2014
AB  - We have investigated the effects of X-ray irradiation to doses of 0, 200 Gy, 20 kGy, 2 MGy, and 20 MGy on the Hamamatsu silicon-photomultiplier (SiPM) S10362-11-050C. The SiPMs were irradiated without applied bias voltage. From current-voltage, capacitance/conductance-voltage, -frequency, pulse-shape, and pulse-area measurements, the SiPM characteristics below and above breakdown voltage were determined. Significant changes of some SiPM parameters are observed. Up to a dose of 20 kGy the performance of the SiPMs is hardly affected by X-ray radiation damage. For doses of 2 and 20 MGy the SiPMs operate with hardly any change in gain, but with a significant increase in dark-count rate and cross-talk probability.
KW  - photomultiplier: silicon (INSPIRE)
KW  - X-ray: irradiation (INSPIRE)
KW  - radiation: damage (INSPIRE)
KW  - performance (INSPIRE)
KW  - photomultiplier: design (INSPIRE)
KW  - stability (INSPIRE)
KW  - semiconductor: conductivity (INSPIRE)
KW  - ionization: yield (INSPIRE)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000339817500019
DO  - DOI:10.1016/j.nima.2014.05.112
UR  - https://bib-pubdb1.desy.de/record/172373
ER  -