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000172373 1001_ $$0P:(DE-H253)PIP1013259$$aXu, Chen$$b0$$eCorresponding Author$$udesy
000172373 245__ $$aInfluence of X-ray irradiation on the properties of the Hamamatsu silicon photomultiplier S10362-11-050C
000172373 260__ $$aAmsterdam$$bNorth-Holland Publ. Co.$$c2014
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000172373 520__ $$aWe have investigated the effects of X-ray irradiation to doses of 0, 200 Gy, 20 kGy, 2 MGy, and 20 MGy on the Hamamatsu silicon-photomultiplier (SiPM) S10362-11-050C. The SiPMs were irradiated without applied bias voltage. From current-voltage, capacitance/conductance-voltage, -frequency, pulse-shape, and pulse-area measurements, the SiPM characteristics below and above breakdown voltage were determined. Significant changes of some SiPM parameters are observed. Up to a dose of 20 kGy the performance of the SiPMs is hardly affected by X-ray radiation damage. For doses of 2 and 20 MGy the SiPMs operate with hardly any change in gain, but with a significant increase in dark-count rate and cross-talk probability.
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000172373 650_7 $$2INSPIRE$$aphotomultiplier: silicon
000172373 650_7 $$2INSPIRE$$aX-ray: irradiation
000172373 650_7 $$2INSPIRE$$aradiation: damage
000172373 650_7 $$2INSPIRE$$aperformance
000172373 650_7 $$2INSPIRE$$aphotomultiplier: design
000172373 650_7 $$2INSPIRE$$astability
000172373 650_7 $$2INSPIRE$$asemiconductor: conductivity
000172373 650_7 $$2INSPIRE$$aionization: yield
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000172373 7001_ $$0P:(DE-H253)PIP1004006$$aKlanner, Robert$$b1
000172373 7001_ $$0P:(DE-H253)PIP1002535$$aGarutti, Erika$$b2
000172373 7001_ $$0P:(DE-HGF)0$$aHellweg, Wolf-Lukas$$b3
000172373 773__ $$0PERI:(DE-600)1466532-3$$a10.1016/j.nima.2014.05.112$$gVol. 762, p. 149 - 161$$p149 - 161$$tNuclear instruments & methods in physics research / A$$v762$$x0168-9002$$y2014
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