%0 Journal Article
%A Xu, Chen
%A Klanner, Robert
%A Garutti, Erika
%A Hellweg, Wolf-Lukas
%T Influence of X-ray irradiation on the properties of the Hamamatsu silicon photomultiplier S10362-11-050C
%J Nuclear instruments & methods in physics research / A
%V 762
%@ 0168-9002
%C Amsterdam
%I North-Holland Publ. Co.
%M PUBDB-2014-03702
%P 149 - 161
%D 2014
%X We have investigated the effects of X-ray irradiation to doses of 0, 200 Gy, 20 kGy, 2 MGy, and 20 MGy on the Hamamatsu silicon-photomultiplier (SiPM) S10362-11-050C. The SiPMs were irradiated without applied bias voltage. From current-voltage, capacitance/conductance-voltage, -frequency, pulse-shape, and pulse-area measurements, the SiPM characteristics below and above breakdown voltage were determined. Significant changes of some SiPM parameters are observed. Up to a dose of 20 kGy the performance of the SiPMs is hardly affected by X-ray radiation damage. For doses of 2 and 20 MGy the SiPMs operate with hardly any change in gain, but with a significant increase in dark-count rate and cross-talk probability.
%K photomultiplier: silicon (INSPIRE)
%K X-ray: irradiation (INSPIRE)
%K radiation: damage (INSPIRE)
%K performance (INSPIRE)
%K photomultiplier: design (INSPIRE)
%K stability (INSPIRE)
%K semiconductor: conductivity (INSPIRE)
%K ionization: yield (INSPIRE)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000339817500019
%R 10.1016/j.nima.2014.05.112
%U https://bib-pubdb1.desy.de/record/172373