Journal Article DESY-2013-00713

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Atomic-scale structure, cation distribution, and bandgap bowing in Cu(In,Ga)Se2 and Cu(In,Ga)S2

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2013
American Institute of Physics Melville, NY

Applied physics letters 103, 081905 () [10.1063/1.4819225]
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Abstract: Mixed chalcopyrite semiconductors like Cu(In,Ga)S2 and Cu(In,Ga)Se2 are characterized by thecoexistence of different local atomic arrangements around the S or Se anion. The resulting aniondisplacement strongly influences the material bandgap. We studied the atomic-scale structure ofCu(In,Ga)S2 as a function of composition using x-ray absorption spectroscopy and valence forcefield simulations. Applying a specially developed model for not fully random cation distributions,we find that structural relaxation of the anion with respect to In and Ga contributes significantlymore to the bandgap bowing observed for Cu(In,Ga)S2 and Cu(In,Ga)Se2 than relaxation withrespect to Cu and group-III atoms.

Classification:

Note: (c) AIP Publishing LLC

Contributing Institute(s):
  1. DOOR-User (DOOR)
Research Program(s):
  1. DORIS Beamline C (POF2-54G13) (POF2-54G13)
  2. FS-Proposal: I-20100027 (I-20100027) (I-20100027)
  3. FS-Proposal: I-20110135 (I-20110135) (I-20110135)
Experiment(s):
  1. DORIS Beamline C (DORIS III)

Appears in the scientific report 2013
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Medline ; Embargoed OpenAccess ; Allianz-Lizenz / DFG ; Current Contents - Social and Behavioral Sciences ; JCR ; NationallizenzNationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection
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 Record created 2013-08-26, last modified 2025-07-30


Published on 2013-08-22. Available in OpenAccess from 2014-08-22.:
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