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@ARTICLE{Eckner:153803,
author = {Eckner, S. and Kämmer, H. and Steinbach, Tobias and
Gnauck, Martin and Johannes, Andreas and Stephan, Christiane
and Schorr, Susan and Schnohr, C. S.},
title = {{A}tomic-scale structure, cation distribution, and bandgap
bowing in {C}u({I}n,{G}a){S}e2 and {C}u({I}n,{G}a){S}2},
journal = {Applied physics letters},
volume = {103},
issn = {1077-3118},
address = {Melville, NY},
publisher = {American Institute of Physics},
reportid = {DESY-2013-00713},
pages = {081905},
year = {2013},
note = {(c) AIP Publishing LLC},
abstract = {Mixed chalcopyrite semiconductors like Cu(In,Ga)S2 and
Cu(In,Ga)Se2 are characterized by thecoexistence of
different local atomic arrangements around the S or Se
anion. The resulting aniondisplacement strongly influences
the material bandgap. We studied the atomic-scale structure
ofCu(In,Ga)S2 as a function of composition using x-ray
absorption spectroscopy and valence forcefield simulations.
Applying a specially developed model for not fully random
cation distributions,we find that structural relaxation of
the anion with respect to In and Ga contributes
significantlymore to the bandgap bowing observed for
Cu(In,Ga)S2 and Cu(In,Ga)Se2 than relaxation withrespect to
Cu and group-III atoms.},
cin = {DOOR},
ddc = {530},
cid = {I:(DE-H253)HAS-User-20120731},
pnm = {DORIS Beamline C (POF2-54G13) / FS-Proposal: I-20100027
(I-20100027) / FS-Proposal: I-20110135 (I-20110135)},
pid = {G:(DE-H253)POF2-C-20130405 / G:(DE-H253)I-20100027 /
G:(DE-H253)I-20110135},
experiment = {EXP:(DE-H253)D-C-20150101},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000323788100020},
doi = {10.1063/1.4819225},
url = {https://bib-pubdb1.desy.de/record/153803},
}