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| Home > Publications database > Atomic-scale structure, cation distribution, and bandgap bowing in Cu(In,Ga)Se2 and Cu(In,Ga)S2 > print |
| Home > Publications database > Atomic-scale structure, cation distribution, and bandgap bowing in Cu(In,Ga)Se2 and Cu(In,Ga)S2 > print |
| 001 | 153803 | ||
| 005 | 20250730151630.0 | ||
| 024 | 7 | _ | |a 10.1063/1.4819225 |2 doi |
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| 100 | 1 | _ | |a Eckner, S. |0 P:(DE-HGF)0 |b 0 |
| 245 | _ | _ | |a Atomic-scale structure, cation distribution, and bandgap bowing in Cu(In,Ga)Se2 and Cu(In,Ga)S2 |
| 260 | _ | _ | |a Melville, NY |c 2013 |b American Institute of Physics |
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| 520 | _ | _ | |a Mixed chalcopyrite semiconductors like Cu(In,Ga)S2 and Cu(In,Ga)Se2 are characterized by thecoexistence of different local atomic arrangements around the S or Se anion. The resulting aniondisplacement strongly influences the material bandgap. We studied the atomic-scale structure ofCu(In,Ga)S2 as a function of composition using x-ray absorption spectroscopy and valence forcefield simulations. Applying a specially developed model for not fully random cation distributions,we find that structural relaxation of the anion with respect to In and Ga contributes significantlymore to the bandgap bowing observed for Cu(In,Ga)S2 and Cu(In,Ga)Se2 than relaxation withrespect to Cu and group-III atoms. |
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| 700 | 1 | _ | |a Kämmer, H. |0 P:(DE-HGF)0 |b 1 |
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| 700 | 1 | _ | |a Gnauck, Martin |0 P:(DE-H253)PIP1013646 |b 3 |
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| 700 | 1 | _ | |a Schnohr, C. S. |0 P:(DE-HGF)0 |b 7 |e Corresponding author |
| 773 | _ | _ | |a 10.1063/1.4819225 |0 PERI:(DE-600)1469436-0 |p 081905 |t Applied physics letters |v 103 |y 2013 |x 1077-3118 |
| 856 | 4 | _ | |y Published on 2013-08-22. Available in OpenAccess from 2014-08-22. |u https://bib-pubdb1.desy.de/record/153803/files/1.4819225.pdf |
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