Journal Article

PHPPUBDB-10606

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Thermally induced defects in silicon irradiated with fast neutrons

Misiuk, A. (Corresponding author) ; Wierzchowski, W. ; Wieteska, K. ; Romanowski, P. ; Bak-Misiuk, J. ; Prujszczyk, M. ; Londos, C. ; Graeff, W.DESY* ; DESY

2009
Pergamon Press Oxford [u.a.]

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Please use a persistent id in citations: doi:10.1016/j.radphyschem.2009.03.087

Abstract: Defect structure of Czochralski grown (1 1 1) oriented silicon single crystals (Cz-Si), irradiated with fast neutrons (energy 5 MeV, dose 5×10$^{16}$ cm $^{−2}$ ) and annealed at up to 1400 K, also under hydrostatic Ar pressure equal to 1.1 GPa, has been investigated by high-resolution X-ray diffraction and synchrotron topography at HASY Laboratory. The annealing, especially at 1270 and 1400 K, results in precipitation of interstitial oxygen and creation of extended defects. A thermally induced oxygen precipitation at high temperatures–pressures in neutron-irradiated Cz-Si reveals the irradiation-related history of investigated samples.

Note: © Elsevier Ltd.; Post referee fulltext in progress 2; Embargo 12 months from publication

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Contributing Institute(s):

1. Experiments with synchrotron radiation (HASYLAB(-2012))

Research Program(s):

1. DORIS Beamline F1 (POF1-550) (POF1-550)
2. DORIS Beamline E2 (POF1-550) (POF1-550)

Experiment(s):

1. DORIS Beamline F1 (DORIS III)
2. DORIS Beamline E2 (DORIS III)

Appears in the scientific report 2009

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Database coverage:
No Author Disambiguation ; No Authors Fulltext

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