%0 Journal Article
%A Misiuk, A.
%A Wierzchowski, W.
%A Wieteska, K.
%A Romanowski, P.
%A Bak-Misiuk, J.
%A Prujszczyk, M.
%A Londos, C.
%A Graeff, W.
%A DESY
%T Thermally induced defects in silicon irradiated with fast neutrons
%J Radiation physics and chemistry
%V 78
%@ 0969-806X
%C Oxford [u.a.]
%I Pergamon Press
%M PHPPUBDB-10606
%P S67-S70
%D 2009
%Z © Elsevier Ltd.; Post referee fulltext in progress 2; Embargo 12 months from publication
%X Defect structure of Czochralski grown (1 1 1) oriented silicon single crystals (Cz-Si), irradiated with fast neutrons (energy 5 MeV, dose 5×10<sup>16</sup> cm <sup>−2</sup> ) and annealed at up to 1400 K, also under hydrostatic Ar pressure equal to 1.1 GPa, has been investigated by high-resolution X-ray diffraction and synchrotron topography at HASY Laboratory. The annealing, especially at 1270 and 1400 K, results in precipitation of interstitial oxygen and creation of extended defects. A thermally induced oxygen precipitation at high temperatures–pressures in neutron-irradiated Cz-Si reveals the irradiation-related history of investigated samples.
%B 9th International School and Symposium on Synchrotron Radiation in Natural Science
%C 15 Jun 2008 - 20 Jun 2008, Ameliowka (Poland)
Y2 15 Jun 2008 - 20 Jun 2008
M2 Ameliowka, Poland
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000270692000015
%R 10.1016/j.radphyschem.2009.03.087
%U https://bib-pubdb1.desy.de/record/87798