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| Journal Article | PUBDB-2025-04566 |
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2025
Inst.
Woodbury, NY
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Please use a persistent id in citations: doi:10.1103/PhysRevB.111.195149 doi:10.3204/PUBDB-2025-04566
Abstract: Hard x-ray angle-resolved photoemission spectroscopy reveals significant changes in the valence band states of EuPd$_2$Si$_2$ at a temperature 𝑇𝑉, where the Eu ions undergo a temperature-induced valence crossover from a magnetic Eu$^{2+ }$state to a low-temperature valence-fluctuating state. The substitution of Pd by Au and Si by Ge results in a decrease in 𝑇𝑉and the emergence of an antiferromagnetic state at low temperatures without valence fluctuations. It has been proposed that the boundary between the antiferromagnetic order and the valence transition represents a first-order phase transition associated with a specific type of second-order critical endpoint. In this scenario, strong coupling effects between fluctuating charge, spin, and lattice degrees of freedom are to be expected. In the case of EuPd$_2$(Si$_{1−𝑥}$Ge$_𝑥$)$_2$ with 𝑥=0.13, which is close to the critical endpoint, a splitting of conduction band states and the emergence of flat bands with a restriction along the $Γ-X$ directions have been observed. A comparison with ab initio theory shows a high degree of agreement with the experimental results.
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