Journal Article

PUBDB-2024-06753

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Sub-2W tunable laser based on silicon photonics power amplifier

Singh, N. K. (Corresponding author)CFEL*DESY* ; Lorenzen, J.CFEL*DESY* ; Kilinc, M.DESY* ; Wang, K. ; Sinobad, M.CFEL*Extern* ; Francis, H. ; Carriera, J. ; Geiselmann, M. ; Demirbas, U.Extern* ; Pergament, M.CFEL*DESY* ; Blanco, S. M. G. ; Kärtner, F.CFEL*XFEL.EU*DESY*

2025
Nature Publishing Group London

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Please use a persistent id in citations: doi:10.1038/s41377-024-01681-1  doi:10.3204/PUBDB-2024-06753

Abstract: High-power tunable lasers are intensely pursued due to their vast application potential such as in telecom, ranging and molecular sensing. Integrated photonics, however, is usually considered not suitable for high-power applications mainly due to its small size which limits the energy storage capacity and therefore the output power. In the late 90s, to improve the beam quality and increase the stored energy, large-mode-area (LMA) fibers were introduced in which the optical mode area is substantially large. Such LMA fibers have transformed the high-power capability of fiber systems ever since. Introducing such an LMA technology at the chip-scale can play an equally disruptive role with high power signal generation from an integrated photonics system. To this end, in this work we demonstrate such a technology, and show a very high-power tunable laser with the help of a silicon photonics based LMA power amplifier. We show output power reaching 1.8 W over a tunability range of 60 nm, spanning from 1.83 µm to 1.89 µm, limited only by the seed laser. Such an integrated LMA device can be used to substantially increase the power of the existing integrated tunable lasers currently limited to a few tens of milliwatts. The power levels demonstrated here reach and surpass that of many benchtop systems which truly makes the silicon photonics based integrated LMA device poised towards mass deployment for high power applications without relying on benchtop systems.

Note: L:MB

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Contributing Institute(s):

1. Ultrafast Lasers & X-rays Division (FS-CFEL-2)

Research Program(s):

1. 631 - Matter – Dynamics, Mechanisms and Control (POF4-631) (POF4-631)
2. DFG project G:(GEPRIS)403188360 - Ultrabreitbandiger Photonisch-Elektronischer Analog-Digital-Wandler (PACE) - Phase 2 (403188360) (403188360)
3. FEMTOCHIP - FEMTOSECOND LASER ON A CHIP (965124) (965124)

Experiment(s):

1. Experiments at CFEL

Appears in the scientific report 2025

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