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@ARTICLE{Singh:617392,
      author       = {Singh, Neetesh Kumar and Lorenzen, Jan and Kilinc, Muharrem
                      and Wang, Kai and Sinobad, Milan and Francis, Henry and
                      Carriera, Jose and Geiselmann, Michael and Demirbas, Uemit
                      and Pergament, Mikhail and Blanco, Sonia M Garcia and
                      Kärtner, Franz},
      title        = {{S}ub-2{W} tunable laser based on silicon photonics power
                      amplifier},
      journal      = {Light},
      volume       = {14},
      number       = {1},
      issn         = {2095-5545},
      address      = {London},
      publisher    = {Nature Publishing Group},
      reportid     = {PUBDB-2024-06753},
      pages        = {18},
      year         = {2025},
      note         = {L:MB},
      abstract     = {High-power tunable lasers are intensely pursued due to
                      their vast application potential such as in telecom, ranging
                      and molecular sensing. Integrated photonics, however, is
                      usually considered not suitable for high-power applications
                      mainly due to its small size which limits the energy storage
                      capacity and therefore the output power. In the late 90s, to
                      improve the beam quality and increase the stored energy,
                      large-mode-area (LMA) fibers were introduced in which the
                      optical mode area is substantially large. Such LMA fibers
                      have transformed the high-power capability of fiber systems
                      ever since. Introducing such an LMA technology at the
                      chip-scale can play an equally disruptive role with high
                      power signal generation from an integrated photonics system.
                      To this end, in this work we demonstrate such a technology,
                      and show a very high-power tunable laser with the help of a
                      silicon photonics based LMA power amplifier. We show output
                      power reaching 1.8 W over a tunability range of 60 nm,
                      spanning from 1.83 µm to 1.89 µm, limited only by the seed
                      laser. Such an integrated LMA device can be used to
                      substantially increase the power of the existing integrated
                      tunable lasers currently limited to a few tens of
                      milliwatts. The power levels demonstrated here reach and
                      surpass that of many benchtop systems which truly makes the
                      silicon photonics based integrated LMA device poised towards
                      mass deployment for high power applications without relying
                      on benchtop systems.},
      cin          = {FS-CFEL-2},
      ddc          = {530},
      cid          = {I:(DE-H253)FS-CFEL-2-20120731},
      pnm          = {631 - Matter – Dynamics, Mechanisms and Control
                      (POF4-631) / DFG project G:(GEPRIS)403188360 -
                      Ultrabreitbandiger Photonisch-Elektronischer
                      Analog-Digital-Wandler (PACE) - Phase 2 (403188360) /
                      FEMTOCHIP - FEMTOSECOND LASER ON A CHIP (965124)},
      pid          = {G:(DE-HGF)POF4-631 / G:(GEPRIS)403188360 /
                      G:(EU-Grant)965124},
      experiment   = {EXP:(DE-H253)CFEL-Exp-20150101},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:39743626},
      UT           = {WOS:001387347000001},
      doi          = {10.1038/s41377-024-01681-1},
      url          = {https://bib-pubdb1.desy.de/record/617392},
}