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| Home > Publications database > Simulations and Performance Studies of a MAPS in 65 nm CMOS Imaging Technology |
| Journal Article/Contribution to a conference proceedings | PUBDB-2024-00740 |
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2024
North-Holland Publ. Co.
Amsterdam
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Please use a persistent id in citations: doi:10.1016/j.nima.2024.169414 doi:10.3204/PUBDB-2024-00740
Report No.: arXiv:2402.14524
Abstract: Monolithic active pixel sensors (MAPS) produced in a 65 nm CMOS imaging technology are being investigated for applications in particle physics. The MAPS design has a small collection electrode characterized by an input capacitance of ~fF, granting a high signal-to-noise ratio and low power consumption. Additionally, the 65 nm CMOS imaging technology brings a reduction in material budget and improved logic density of the readout circuitry, compared to previously studied technologies. Given these features, this technology was chosen by the TANGERINE project to develop the next generation of silicon pixel sensors. The sensor design targets temporal and spatial resolutions compatible with the requirements for a vertex detector at future lepton colliders. Simulations and test-beam characterization of prototypes have been carried out in close collaboration with the CERN EP R&D program and the ALICE ITS3 upgrade. TCAD device simulations using generic doping profiles and Monte Carlo simulations have been used to build an understanding of the technology and predict the performance parameters of the sensor. Prototypes of a 65 nm CMOS MAPS with a small collection electrode have been characterized in laboratory and test-beam facilities by studying their cluster size, charge collection, and efficiency. This work compares simulation results to test-beam data. The experimental results establish this technology as a promising candidate for a vertex detector at future lepton colliders and give valuable information for improving the simulation approach.
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