Journal Article

PUBDB-2022-04570

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Dynamical non-linear inversion of the surface photovoltage on Si(100)

Roth, F. (Corresponding author)Extern*XFEL.EU* ; Mahl, J.Extern* ; Borgwardt, M.Extern* ; Wenthaus, L.DESY* ; Brausse, F.XFEL.EU* ; Garbe, V. ; Gessner, O.Extern*XFEL.EU* ; Eberhardt, W. (Corresponding author)Extern*XFEL.EU*DESY*

2024
APS College Park, Md.

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Please use a persistent id in citations: doi:10.1103/PhysRevLett.132.146201  doi:10.3204/PUBDB-2022-04570

Abstract: A surface photovoltage (SPV) is observed whenever a doped semiconductor with non-negligible band bending is illuminated by light and charge carriers are excited across the band gap. The sign of the SPV depends on the nature of the doping, the amplitude of the SPV increases with the fluence of the light illumination up to a saturation value, which is determined by the doping concentration. We have investigated Si(100) samples with well-characterized doping levels over a wide range of illumination fluences. Surprisingly, the sign of the SPV upon illumination with 532 nm photons reverses for some p-doping concentrations at high fluences. This is a new effect associated with a crossover between electronic excitations in the bulk and at the surface of the semiconductor.

Note: Correspondinng authors: Friedrich Roth and Wolfgang Eberhardt

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Contributing Institute(s):

1. FLASH Wissenschaftlicher Nutzerbetrieb (FS-FLASH-O)
2. MID (XFEL_E1_MID)
3. FS-Photon Science (FS-PS)

Research Program(s):

1. 631 - Matter – Dynamics, Mechanisms and Control (POF4-631) (POF4-631)
2. 05K22OF2 - Untersuchungen des Ladungstransfers an Grenzflächen mittels pikosekunden zeitaufgelöster Photoelektronenspektroskopie bei Umgebungsdruck (BMBF-05K22OF2) (BMBF-05K22OF2)

Experiment(s):

1. Measurement at external facility

Appears in the scientific report 2024

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