TY  - JOUR
AU  - Roth, Friedrich
AU  - Mahl, Johannes
AU  - Borgwardt, Mario
AU  - Wenthaus, Lukas
AU  - Brausse, Felix
AU  - Garbe, Valentin
AU  - Gessner, Oliver
AU  - Eberhardt, Wolfgang
TI  - Dynamical non-linear inversion of the surface photovoltage on Si(100)
JO  - Physical review letters
VL  - 132
IS  - 14
SN  - 0031-9007
CY  - College Park, Md.
PB  - APS
M1  - PUBDB-2022-04570
SP  - 146201
PY  - 2024
N1  - Correspondinng authors: Friedrich Roth and Wolfgang Eberhardt
AB  - A surface photovoltage (SPV) is observed whenever a doped semiconductor with non-negligible band bending is illuminated by light and charge carriers are excited across the band gap. The sign of the SPV depends on the nature of the doping, the amplitude of the SPV increases with the fluence of the light illumination up to a saturation value, which is determined by the doping concentration. We have investigated Si(100) samples with well-characterized doping levels over a wide range of illumination fluences. Surprisingly, the sign of the SPV upon illumination with 532 nm photons reverses for some p-doping concentrations at high fluences. This is a new effect associated with a crossover between electronic excitations in the bulk and at the surface of the semiconductor.
LB  - PUB:(DE-HGF)16
C6  - 38640387
UR  - <Go to ISI:>//WOS:001224681500009
DO  - DOI:10.1103/PhysRevLett.132.146201
UR  - https://bib-pubdb1.desy.de/record/481802
ER  -