Journal Article PUBDB-2019-01223

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Layer-by-Layer Graphene Growth on β-SiC/Si(001)

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2019
ACS Washington, DC

ACS nano 13(1), 526 - 535 () [10.1021/acsnano.8b07237]
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Abstract: The mechanism of few-layer graphene growth on the technologically relevant cubic-SiC/Si(001) substrate is uncovered using high-resolution core-level and angle-resolved photoelectron spectroscopy, low-energy electron microscopy, and microspot low-energy electron diffraction. The thickness of the graphitic overlayer supported on the silicon carbide substrate and related changes in the surface structure are precisely controlled by monitoring the progress of the surface graphitization in situ during high-temperature graphene synthesis, using a combination of microspectroscopic techniques. The experimental data reveal gradual changes in the preferential graphene lattice orientations at the initial stages of the few-layer graphene growth on SiC(001) and can act as reference data for controllable growth of single-, double-, and triple-layer graphene on silicon carbide substrates.

Classification:

Note: © American Chemical Society

Contributing Institute(s):
  1. Experimentebetreuung PETRA III (FS-PE)
Research Program(s):
  1. 6214 - Nanoscience and Materials for Information Technology (POF3-621) (POF3-621)
  2. 6G3 - PETRA III (POF3-622) (POF3-622)
Experiment(s):
  1. PETRA Beamline P04 (PETRA III)

Appears in the scientific report 2019
Database coverage:
Medline ; Embargoed OpenAccess ; Clarivate Analytics Master Journal List ; Current Contents - Physical, Chemical and Earth Sciences ; IF >= 10 ; JCR ; NCBI Molecular Biology Database ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Web of Science Core Collection
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 Record created 2019-02-22, last modified 2025-07-17


Published on 2018-12-10. Available in OpenAccess from 2019-12-10.:
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