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| Book/Report/Master Thesis | PUBDB-2017-00850 |
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2017
Verlag Deutsches Elektronen-Synchrotron
Hamburg
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Please use a persistent id in citations: doi:10.3204/PUBDB-2017-00850
Report No.: DESY-THESIS-2017-006
Abstract: The edge Transient Current Technique (TCT) is a method for the investigation of silicon sensors. This method requires infrared light from a sub-ns pulsed laser to be focused to aμm-size spot and scanned across the polished cut edge of a sensor. Electron-hole pairs are generated along the light beam in the sensor. These charge carriers drift in the electric field and induce transient currents on the sensor electrodes. The current transients are analyzed as a function of the applied voltage, temperature, absorbed dose and position of the laser-light focus, in order to determine the the drift velocities, electric field and the charge collection in the strip sensor.In the scope of this work, a new edge-TCT setup is commissioned, a procedure for the polishing of the cut edge is implemented and a method to position the focus of the laserlight with respect to the sensor is developed.First edge-TCT measurements are performed on non-irradiated, 285 μm thick n-type strip sensors, and the pulse shape and charge collection is studied under different conditions.Furthermore, the prompt current of the transients is extracted, which is the first step towards the determination of the electric field. A new method to measure the attenuation of light in silicon is tested on a non-irradiated sensor and on sensors irradiated with up to a1 MeV neutron equivalent fluence of 1.14 × 10 15 cm −2 , using laser light with a wavelength of 1052 nm.
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