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@MASTERSTHESIS{Feindt:317731,
      author       = {Feindt, Finn},
      othercontributors = {Garutti, Erika and Steinbrueck, Georg},
      title        = {{E}dge-{TCT} for the {I}nvestigation of {R}adiation
                      {D}amaged {S}ilicon {S}trip {S}ensors},
      issn         = {1435-8085},
      school       = {Universität Hamburg},
      type         = {MS},
      address      = {Hamburg},
      publisher    = {Verlag Deutsches Elektronen-Synchrotron},
      reportid     = {PUBDB-2017-00850, DESY-THESIS-2017-006},
      series       = {DESY-THESIS},
      pages        = {95},
      year         = {2017},
      note         = {Universität Hamburg, Masterarbeit, 2016},
      abstract     = {The edge Transient Current Technique (TCT) is a method for
                      the investigation of silicon sensors. This method requires
                      infrared light from a sub-ns pulsed laser to be focused to
                      aμm-size spot and scanned across the polished cut edge of a
                      sensor. Electron-hole pairs are generated along the light
                      beam in the sensor. These charge carriers drift in the
                      electric field and induce transient currents on the sensor
                      electrodes. The current transients are analyzed as a
                      function of the applied voltage, temperature, absorbed dose
                      and position of the laser-light focus, in order to determine
                      the the drift velocities, electric field and the charge
                      collection in the strip sensor.In the scope of this work, a
                      new edge-TCT setup is commissioned, a procedure for the
                      polishing of the cut edge is implemented and a method to
                      position the focus of the laserlight with respect to the
                      sensor is developed.First edge-TCT measurements are
                      performed on non-irradiated, 285 μm thick n-type strip
                      sensors, and the pulse shape and charge collection is
                      studied under different conditions.Furthermore, the prompt
                      current of the transients is extracted, which is the first
                      step towards the determination of the electric field. A new
                      method to measure the attenuation of light in silicon is
                      tested on a non-irradiated sensor and on sensors irradiated
                      with up to a1 MeV neutron equivalent fluence of 1.14 × 10
                      15 cm −2 , using laser light with a wavelength of 1052
                      nm.},
      cin          = {UNI/EXP / CMS},
      cid          = {$I:(DE-H253)UNI_EXP-20120731$ / I:(DE-H253)CMS-20120731},
      pnm          = {632 - Detector technology and systems (POF3-632)},
      pid          = {G:(DE-HGF)POF3-632},
      experiment   = {EXP:(DE-H253)LHC-Exp-CMS-20150101},
      typ          = {PUB:(DE-HGF)3 / PUB:(DE-HGF)29 / PUB:(DE-HGF)19},
      doi          = {10.3204/PUBDB-2017-00850},
      url          = {https://bib-pubdb1.desy.de/record/317731},
}