Poster

PUBDB-2016-01127

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Bond stretching force constants in (In,Ga)P

Eckner, S.>Extern* ; Gnauck, M.>Extern* ; Johannes, A.>Extern* ; Kaemmer, H.>Extern* ; Steinbach, T.>Extern* ; Ridgway, M.>Extern* ; Schnohr, C. (Corresponding author)>Extern*

2015

Abstract: Bond stretching force constants determine fundamental properties of mixed semiconductors. In this study, (In,Ga)P grown by metal organic chemical vapour deposition was investigated using extended X-ray absorption fine structure spectroscopy. Measurements at the Ga K edge were performed at ten different temperatures to determine the bond length variation as a function of temperature. Utilizing an Einstein model, the bond stretching force constant of the Ga-P-bond in (In,Ga)P was determined. It decreases with increasing indium content, meaning that bond stretching force constants determined for binary III-V-semiconductors may not be readily transferable to ternary systems.

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Contributing Institute(s):

1. DOOR-User (DOOR)

Research Program(s):

1. 899 - ohne Topic (POF3-899) (POF3-899)
2. FS-Proposal: I-20110408 (I-20110408) (I-20110408)

Experiment(s):

1. DORIS Beamline C (DORIS III)

Appears in the scientific report 2015

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