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@INPROCEEDINGS{Eckner:295211,
author = {Eckner, Stefanie and Gnauck, Martin and Johannes, Andreas
and Kaemmer, Helena and Steinbach, Tobias and Ridgway, Mark
and Schnohr, Claudia},
title = {{B}ond stretching force constants in ({I}n,{G}a){P}},
reportid = {PUBDB-2016-01127},
year = {2015},
abstract = {Bond stretching force constants determine fundamental
properties of mixed semiconductors. In this study, (In,Ga)P
grown by metal organic chemical vapour deposition was
investigated using extended X-ray absorption fine structure
spectroscopy. Measurements at the Ga K edge were performed
at ten different temperatures to determine the bond length
variation as a function of temperature. Utilizing an
Einstein model, the bond stretching force constant of the
Ga-P-bond in (In,Ga)P was determined. It decreases with
increasing indium content, meaning that bond stretching
force constants determined for binary III-V-semiconductors
may not be readily transferable to ternary systems.},
month = {Aug},
date = {2015-08-23},
organization = {16th International Conference on X-ray
Absorption Fine Structure Spectroscopy,
Karlsruhe (Germany), 23 Aug 2015 - 28
Aug 2015},
cin = {DOOR},
cid = {I:(DE-H253)HAS-User-20120731},
pnm = {899 - ohne Topic (POF3-899) / FS-Proposal: I-20110408
(I-20110408)},
pid = {G:(DE-HGF)POF3-899 / G:(DE-H253)I-20110408},
experiment = {EXP:(DE-H253)D-C-20150101},
typ = {PUB:(DE-HGF)24},
url = {https://bib-pubdb1.desy.de/record/295211},
}