TY  - CONF
AU  - Eckner, Stefanie
AU  - Gnauck, Martin
AU  - Johannes, Andreas
AU  - Kaemmer, Helena
AU  - Steinbach, Tobias
AU  - Ridgway, Mark
AU  - Schnohr, Claudia
TI  - Bond stretching force constants in (In,Ga)P
M1  - PUBDB-2016-01127
PY  - 2015
AB  - Bond stretching force constants determine fundamental properties of mixed semiconductors. In this study, (In,Ga)P grown by metal organic chemical vapour deposition was investigated using extended X-ray absorption fine structure spectroscopy. Measurements at the Ga K edge were performed at ten different temperatures to determine the bond length variation as a function of temperature. Utilizing an Einstein model, the bond stretching force constant of the Ga-P-bond in (In,Ga)P was determined. It decreases with increasing indium content, meaning that bond stretching force constants determined for binary III-V-semiconductors may not be readily transferable to ternary systems.
T2  - 16th International Conference on X-ray Absorption Fine Structure Spectroscopy
CY  - 23 Aug 2015 - 28 Aug 2015, Karlsruhe (Germany)
Y2  - 23 Aug 2015 - 28 Aug 2015
M2  - Karlsruhe, Germany
LB  - PUB:(DE-HGF)24
UR  - https://bib-pubdb1.desy.de/record/295211
ER  -