000295211 001__ 295211
000295211 005__ 20210406110513.0
000295211 037__ $$aPUBDB-2016-01127
000295211 1001_ $$0P:(DE-H253)PIP1016220$$aEckner, Stefanie$$b0
000295211 1112_ $$a16th International Conference on X-ray Absorption Fine Structure Spectroscopy$$cKarlsruhe$$d2015-08-23 - 2015-08-28$$gXAFS16$$wGermany
000295211 245__ $$aBond stretching force constants in (In,Ga)P
000295211 260__ $$c2015
000295211 3367_ $$2DRIVER$$aconferenceObject
000295211 3367_ $$033$$2EndNote$$aConference Paper
000295211 3367_ $$0PUB:(DE-HGF)24$$2PUB:(DE-HGF)$$aPoster$$bposter$$mposter$$s1461159500_25481
000295211 3367_ $$2BibTeX$$aINPROCEEDINGS
000295211 520__ $$aBond stretching force constants determine fundamental properties of mixed semiconductors. In this study, (In,Ga)P grown by metal organic chemical vapour deposition was investigated using extended X-ray absorption fine structure spectroscopy. Measurements at the Ga K edge were performed at ten different temperatures to determine the bond length variation as a function of temperature. Utilizing an Einstein model, the bond stretching force constant of the Ga-P-bond in (In,Ga)P was determined. It decreases with increasing indium content, meaning that bond stretching force constants determined for binary III-V-semiconductors may not be readily transferable to ternary systems.
000295211 536__ $$0G:(DE-HGF)POF3-899$$a899 - ohne Topic (POF3-899)$$cPOF3-899$$fPOF III$$x0
000295211 536__ $$0G:(DE-H253)I-20110408$$aFS-Proposal: I-20110408 (I-20110408)$$cI-20110408$$x1
000295211 693__ $$0EXP:(DE-H253)D-C-20150101$$1EXP:(DE-H253)DORISIII-20150101$$6EXP:(DE-H253)D-C-20150101$$aDORIS III$$fDORIS Beamline C$$x0
000295211 7001_ $$0P:(DE-H253)PIP1013646$$aGnauck, Martin$$b1
000295211 7001_ $$0P:(DE-H253)PIP1016219$$aJohannes, Andreas$$b2
000295211 7001_ $$0P:(DE-H253)PIP1012796$$aKaemmer, Helena$$b3
000295211 7001_ $$0P:(DE-H253)PIP1012822$$aSteinbach, Tobias$$b4
000295211 7001_ $$0P:(DE-H253)PIP1015011$$aRidgway, Mark$$b5
000295211 7001_ $$0P:(DE-H253)PIP1011763$$aSchnohr, Claudia$$b6$$eCorresponding author
000295211 909CO $$ooai:bib-pubdb1.desy.de:295211$$pVDB
000295211 9101_ $$0I:(DE-HGF)0$$6P:(DE-H253)PIP1016220$$aExternes Institut$$b0$$k>Extern
000295211 9101_ $$0I:(DE-HGF)0$$6P:(DE-H253)PIP1013646$$aExternes Institut$$b1$$k>Extern
000295211 9101_ $$0I:(DE-HGF)0$$6P:(DE-H253)PIP1016219$$aExternes Institut$$b2$$k>Extern
000295211 9101_ $$0I:(DE-HGF)0$$6P:(DE-H253)PIP1012796$$aExternes Institut$$b3$$k>Extern
000295211 9101_ $$0I:(DE-HGF)0$$6P:(DE-H253)PIP1012822$$aExternes Institut$$b4$$k>Extern
000295211 9101_ $$0I:(DE-HGF)0$$6P:(DE-H253)PIP1015011$$aExternes Institut$$b5$$k>Extern
000295211 9101_ $$0I:(DE-HGF)0$$6P:(DE-H253)PIP1011763$$aExternes Institut$$b6$$k>Extern
000295211 9131_ $$0G:(DE-HGF)POF3-899$$1G:(DE-HGF)POF3-890$$2G:(DE-HGF)POF3-800$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bProgrammungebundene Forschung$$lohne Programm$$vohne Topic$$x0
000295211 9141_ $$y2015
000295211 9201_ $$0I:(DE-H253)HAS-User-20120731$$kDOOR$$lDOOR-User$$x0
000295211 980__ $$aposter
000295211 980__ $$aVDB
000295211 980__ $$aI:(DE-H253)HAS-User-20120731
000295211 980__ $$aUNRESTRICTED