Study of high-dose X-ray radiation damage of silicon sensors

Klanner, Robert; Zhang, Jiaguo; Schwandt, Joern; Pintilie, Ioana; Fretwurst, Eckhart

doi:10.1016/j.nima.2013.05.131

Journal Article

DESY-2014-01975

Study of high-dose X-ray radiation damage of silicon sensors

Klanner, R. (Corresponding author)Extern* ; Fretwurst, E.Extern* ; Pintilie, I.Extern* ; Schwandt, J.Extern* ; Zhang, J.DESY*

2013
North-Holland Publ. Co. Amsterdam

Nuclear instruments & methods in physics research / A 732, 117 - 121 (2013) [10.1016/j.nima.2013.05.131]

This record in other databases:

Please use a persistent id in citations: doi:10.1016/j.nima.2013.05.131 doi:10.3204/DESY-2014-01975

Abstract: The high intensity and high repetition rate of the European X-Ray Free-Electron Laser, presently under construction in Hamburg, will require pixel sensors which can stand X-ray doses up to 1 GGy for 3 years of operation. Within the AGIPD Collaboration the Hamburg group has systematically studied X-ray damage in silicon sensors for the dose range between 1 kGy and 1 GGy using strip sensors and test structures fabricated on high-ohmic n-type silicon from four different vendors. The densities of oxide charges, interface traps and surface current as function of dose and annealing conditions have been determined. The results have been implemented in TCAD simulations, and the radiation performance of strip sensors and guard-ring structures has been simulated and compared to experimental results. Finally, with the help of detailed TCAD simulations, the layout and technological parameters of the AGIPD pixel sensor have been optimized. It is found that the optimization for silicon sensors exposed to high X-ray doses is significantly different from that for non-irradiated sensors, and that the specifications of the AGIPD sensor can be met.

Classification: