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| Contribution to a conference proceedings/Journal Article | PUBDB-2026-02798 |
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2026
Inst. of Physics
London
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Please use a persistent id in citations: doi:10.1088/1748-0221/21/04/C04001 doi:10.3204/PUBDB-2026-02798
Report No.: arXiv:2602.23139
Abstract: A fast simulation method is presented for a depleted monolithic active pixel sensor, which uses a data driven parameterization of the charge collection and propagation.This approach provides an efficient alternative to TCAD simulations, particularly for sensors whose proprietary process details — such as doping profiles or implant geometries — are unavailable.Data was obtained with a MALTA2 sensor fabricated in a 180 nm CMOS imaging technology on 30 µm epitaxial silicon using the MALTA beam telescope at CERN SPS.The model reproduces the measured in-pixel efficiency with high accuracy and enables a realistic yet computationally lightweight analog pixel simulation.This method will be further employed in optimizing the digital sensor design for applications in high-rate particle tracking and high-granularity calorimetry.
Keyword(s): Detector modelling and simulations II (electric fields ; charge transport ; multiplication and induction ; pulse formation ; electron emission ; etc) ; Particle tracking detectors ; Radiation-hard detectors
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