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| Home > Publications database > Effect of deposition temperature on the quality of Alq$_3$ films and Alq$_3$-Co interfaces |
| Journal Article | PUBDB-2026-01026 |
; ; ; ; ; ; ; ;
2025
Elsevier
Amsterdam
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Please use a persistent id in citations: doi:10.1016/j.physb.2025.417125
Abstract: The quality of organic semiconductor [tris(8-hydroxyquinoline)aluminum] Alq3 films and interface of Alq3-Co heterostructure plays a crucial role in the performance of organic spintronic devices. Four Alq3 thin films were deposited at four different substrate temperatures ranging from 30 °C to 90 °C to study the effects of deposition temperature on its structure using x-ray reflectivity (XRR) and Grazing-incidence small-angle x-ray scattering (GI-SAXS) studies. While XRR yields the internal structure of the films, GISAXS yields morphology. XRR studies reveal good-quality Alq3 films with smooth surfaces roughness less than 10 Å. Electron density gradually increases from 0.40 e/Å3 to 0.43 e/Å3 with increasing deposition temperature, which indicates continual reduction of porosity in the films. GI-SAXS studies demonstrate that with increasing deposition temperature pore separation increases from 210 Å to 810 Å and pore depth decreases progressively from 300 Å to 150 Å in the Alq3 films. To study Co diffusion into the Alq3 layer, four Si/W/Alq3/Co/Alq3 multilayers were investigated using XRR and grazing-incidence x-ray standing wave (GI-XSW) measurements simultaneously. The Alq3 layers in the multilayers were deposited at the four different substrate temperatures as mentioned above. The combined XRR & GI-XSW analysis shows that with increasing growth temperature of Alq3 layer, penetration of Co into Alq3 through Co on Alq3 interface gradually reduces from 300 Å to 130 Å with reduced concentration. This study demonstrates that by modulating the deposition temperature of Alq3 film, quality of Alq3 films and interface of Co-Alq3 heterostructures can be improved significantly, which is required for better performance of organic spintronic devices.
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