Journal Article PUBDB-2026-00140

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Radiation-Induced Disorder and Lattice Relaxation in Gd$_3$Ga$_5$O$_{12}$ Under Swift Xe Ion Irradiation

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2025
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Crystals 15(12), 1065 () [10.3390/cryst15121065]
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Abstract: This study presents a comprehensive Raman spectroscopic and mechanical investigation of Gd$_3$Ga$_5$O$_{12}$ (GGG) single crystals irradiated with 231 MeV 131Xe ions at fluences ranging from 1 × 10$^{11}$ to 3.3 × 10$^{13}$ ions/cm$^2$. Raman analysis reveals that all fundamental vibrational modes of the garnet structure remain observable up to the highest fluence, with the preservation of garnet crystalline topology/absence of secondary crystalline phases. However, significant line broadening (FWHM increase by 20–100%) and low-frequency shifts indicate progressive lattice disorder and phonon-defect scattering. High-frequency Ga-O stretching modes (A$_{1g}$, T$_{2g}$ ~740 cm$^{−1}$) remain the most resistant to irradiation, while low-energy translational modes involving Gd$^{3+}$ ions exhibit pronounced degradation and partial disappearance at high fluence. Complementary nanoindentation measurements show radiation-induced softening: hardness decreases by up to ≈60% at 3.3 × 1013 ions/cm$^2$, consistent with amorphization and overlapping ion tracks (~10–12 μm deep). Raman spectroscopy shows that the garnet lattice remains as the only crystalline phase up to 3.3 × 10$^{13}$ ions/cm$^2$, while significant line broadening, mode suppression and a strong hardness decrease indicate progressive structural disorder and partial amorphization of the near-surface region. These results demonstrate that GGG maintains crystalline integrity below the track-overlap threshold (~6 keV/nm) but undergoes strong structural relaxation and mechanical weakening once this limit is exceeded. A new analytical methodology has been developed to quantify radiation-induced structural degradation.

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Contributing Institute(s):
  1. PETRA-S (FS-PETRA-S)
Research Program(s):
  1. 632 - Materials – Quantum, Complex and Functional Materials (POF4-632) (POF4-632)
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 Record created 2026-01-08, last modified 2026-01-12


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