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Journal Article | PUBDB-2025-00476 |
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2025
Optica
Washington, DC
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Please use a persistent id in citations: doi:10.1364/OE.546052
Abstract: The monolithic fabrication of passive, nonlinear, and active functionalities on asingle chip is highly desired in the wake of the development and commercialization of integratedphotonic platforms. However, the co-integration of diverse functionalities has been challengingas each platform is optimized for specific applications, typically requiring different structuresand fabrication flows. In this article, we report on a monolithic and complementary metal-oxidesemiconductor CMOS-compatible hybrid wafer-scale photonics platform that is suitable for linear,nonlinear, and active photonics based on moderate confinement 0.4-µm-thick Si3N4 waveguidinglayer coated with a ∼0.4-µm thick TeO2 film. This platform offers four main advantages, whichare (1) ensuring reduced stress and film cracking for scalable fabrication by using thin Si3N4, (2)allowing polarization-insensitive single-mode operation at telecom wavelengths, (3) enhancingwaveguide nonlinearity and allowing dispersion engineering by adding the TeO2 film coating,and (4) achieving amplification and lasing through incorporation of rare-earth dopants during theTeO2 film deposition step. We present the design and experimental measurement of TeO2-coated∼0.4-µm-thick Si3N4 microring resonators with internal Q factors of 7.5 × 105and 5.2 × 105forTE and TM polarizations, respectively. The experimental results show that the dispersion ofTeO2-coated ∼0.4-µm-thick Si3N4 waveguides can be engineered between normal and anomalousby adjusting the thickness of the TeO2 layer. For a 1.6-µm wide, 500 µm bend radius ring resonatorwith a ∼0.4-µm-thick TeO2 coating, anomalous dispersion values of 25 and 78 ps/nm·km weremeasured at 1552 nm wavelength for the TE and TM-modes, respectively, and the onset of Kerrcomb generation was observed. Also, by applying an Er-doped TeO2 coating, an optical amplifierwith TE and TM net gain and 5.5 dB net internal gain at 1533 nm in a 6.7-cm-long waveguideand a microdisk laser were demonstrated. These results show a promising route to monolithicintegration of passive, nonlinear, and active functionalities via hybrid waveguides on standardsilicon photonic platforms
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