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@ARTICLE{Mbonde:622782,
      author       = {Mbonde, Hamidu M. and Hashemi, Batoul and Segat Frare,
                      Bruno L. and Wildi, Thibault and Ahmadi, Pooya Torab and
                      Bonneville, Dawson B. and Singh, Neetesh and Mascher, Peter
                      and Kärtner, Franz X. and Herr, Tobias and Bradley,
                      Jonathan D. B.},
      title        = {{D}emonstration of passive, nonlinear, and active devices
                      on a hybrid photonic platform},
      journal      = {Optics express},
      volume       = {33},
      number       = {2},
      issn         = {1094-4087},
      address      = {Washington, DC},
      publisher    = {Optica},
      reportid     = {PUBDB-2025-00476},
      pages        = {1836 - 1847},
      year         = {2025},
      note         = {Waiting for fulltext},
      abstract     = {The monolithic fabrication of passive, nonlinear, and
                      active functionalities on asingle chip is highly desired in
                      the wake of the development and commercialization of
                      integratedphotonic platforms. However, the co-integration of
                      diverse functionalities has been challengingas each platform
                      is optimized for specific applications, typically requiring
                      different structuresand fabrication flows. In this article,
                      we report on a monolithic and complementary
                      metal-oxidesemiconductor CMOS-compatible hybrid wafer-scale
                      photonics platform that is suitable for linear,nonlinear,
                      and active photonics based on moderate confinement
                      0.4-µm-thick Si3N4 waveguidinglayer coated with a
                      ∼0.4-µm thick TeO2 film. This platform offers four main
                      advantages, whichare (1) ensuring reduced stress and film
                      cracking for scalable fabrication by using thin Si3N4,
                      (2)allowing polarization-insensitive single-mode operation
                      at telecom wavelengths, (3) enhancingwaveguide nonlinearity
                      and allowing dispersion engineering by adding the TeO2 film
                      coating,and (4) achieving amplification and lasing through
                      incorporation of rare-earth dopants during theTeO2 film
                      deposition step. We present the design and experimental
                      measurement of TeO2-coated∼0.4-µm-thick Si3N4 microring
                      resonators with internal Q factors of 7.5 × 105and 5.2 ×
                      105forTE and TM polarizations, respectively. The
                      experimental results show that the dispersion ofTeO2-coated
                      ∼0.4-µm-thick Si3N4 waveguides can be engineered between
                      normal and anomalousby adjusting the thickness of the TeO2
                      layer. For a 1.6-µm wide, 500 µm bend radius ring
                      resonatorwith a ∼0.4-µm-thick TeO2 coating, anomalous
                      dispersion values of 25 and 78 ps/nm·km weremeasured at
                      1552 nm wavelength for the TE and TM-modes, respectively,
                      and the onset of Kerrcomb generation was observed. Also, by
                      applying an Er-doped TeO2 coating, an optical amplifierwith
                      TE and TM net gain and 5.5 dB net internal gain at 1533 nm
                      in a 6.7-cm-long waveguideand a microdisk laser were
                      demonstrated. These results show a promising route to
                      monolithicintegration of passive, nonlinear, and active
                      functionalities via hybrid waveguides on standardsilicon
                      photonic platforms},
      cin          = {FS-CFEL-2},
      ddc          = {530},
      cid          = {I:(DE-H253)FS-CFEL-2-20120731},
      pnm          = {631 - Matter – Dynamics, Mechanisms and Control
                      (POF4-631) / FEMTOCHIP - FEMTOSECOND LASER ON A CHIP
                      (965124)},
      pid          = {G:(DE-HGF)POF4-631 / G:(EU-Grant)965124},
      experiment   = {EXP:(DE-H253)CFEL-Exp-20150101},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {39876346},
      UT           = {WOS:001420799700008},
      doi          = {10.1364/OE.546052},
      url          = {https://bib-pubdb1.desy.de/record/622782},
}