Home > Publications database > In Situ Surface Reconstruction toward Planar Heterojunction for Efficient and Stable FAPbI$_3$ Quantum Dot Solar Cells |
Journal Article | PUBDB-2024-00361 |
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2024
Wiley-VCH
Weinheim
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Please use a persistent id in citations: doi:10.1002/adma.202309890
Abstract: Pure-phase α-FAPbI$_3$ quantum dots (QDs) are the focus of an increasing interest in photovoltaics due to their superior ambient stability, large absorption coefficient, and long charge-carrier lifetime. However, the trap states induced by the ligand-exchange process limit the photovoltaic performances. Here, a simple post treatment using methylamine thiocyanate is developed to reconstruct the FAPbI$_3$-QD film surface, in which a MAPbI$_3$ capping layer with a thickness of 6.2 nm is formed on the film top. This planar perovskite heterojunction leads to a reduced density of trap-states, a decreased band gap, and a facilitated charge carrier transport. As a result, a record high power conversion efficiency (PCE) of 16.23% with negligible hysteresis is achieved for the FAPbI$_3$ QD solar cell, and it retains over 90% of the initial PCE after being stored in ambient environment for 1000 h.
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