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@ARTICLE{Li:601669,
author = {Li, Maoxin and Bao, Yaqi and Hui, Wei and Sun, Kun and Gu,
Lei and Kang, Xinxin and Wang, Dourong and Wang, Baohua and
Deng, Haoran and Guo, Renjun and Li, Zerui and Jiang,
Xiongzhuo and Mueller-Buschbaum, Peter and Song, Lin and
Huang, Wei},
title = {{I}n {S}itu {S}urface {R}econstruction toward {P}lanar
{H}eterojunction for {E}fficient and {S}table {FAP}b{I}$_3$
{Q}uantum {D}ot {S}olar {C}ells},
journal = {Advanced materials},
volume = {36},
number = {6},
issn = {0935-9648},
address = {Weinheim},
publisher = {Wiley-VCH},
reportid = {PUBDB-2024-00361},
pages = {2309890},
year = {2024},
note = {Waiting for fulltext},
abstract = {Pure-phase α-FAPbI$_3$ quantum dots (QDs) are the focus of
an increasing interest in photovoltaics due to their
superior ambient stability, large absorption coefficient,
and long charge-carrier lifetime. However, the trap states
induced by the ligand-exchange process limit the
photovoltaic performances. Here, a simple post treatment
using methylamine thiocyanate is developed to reconstruct
the FAPbI$_3$-QD film surface, in which a MAPbI$_3$ capping
layer with a thickness of 6.2 nm is formed on the film top.
This planar perovskite heterojunction leads to a reduced
density of trap-states, a decreased band gap, and a
facilitated charge carrier transport. As a result, a record
high power conversion efficiency (PCE) of 16.23\% with
negligible hysteresis is achieved for the FAPbI$_3$ QD solar
cell, and it retains over 90\% of the initial PCE after
being stored in ambient environment for 1000 h.},
cin = {DOOR ; HAS-User},
ddc = {660},
cid = {I:(DE-H253)HAS-User-20120731},
pnm = {6G3 - PETRA III (DESY) (POF4-6G3) / DFG project 390776260 -
EXC 2089: e-conversion (390776260)},
pid = {G:(DE-HGF)POF4-6G3 / G:(GEPRIS)390776260},
experiment = {EXP:(DE-H253)P-P03-20150101},
typ = {PUB:(DE-HGF)16},
pubmed = {38011853},
UT = {WOS:001114572700001},
doi = {10.1002/adma.202309890},
url = {https://bib-pubdb1.desy.de/record/601669},
}