Mini-MALTA: Radiation hard pixel designs for small-electrode monolithic CMOS sensors for the High Luminosity LHC

Dyndal, M.; Mandić, I.; Moustakas, K.; Mikuž, M.; Riedler, P.; Dachs, F.; Maneuski, D.; Solans Sanchez, C.; Suligoj, T.; Simon Argemi, L.; Bortoletto, D.; Hiti, B.; Flores Sanz de Acedo, L.; Schioppa, E. J.; Degerli, Y.; Worm, S.; Allport, P.; Hemperek, T.; Denizli, H.; Munker, M.; Berdalovic, I.; Sandaker, H.; Snoeys, W.; Bhat, S.; Bespin, C.; Barbero, M.; Habib, A.; Buttar, C.; Cardella, R.; Oyulmaz, K. Y.; Freeman, P.; Asensi Tortajada, I.; Kugathasan, T.; Pernegger, H.; Caicedo, I.; Gonella, L.; Hirono, T.; Dao, V.; Wermes, N.; Piro, F.; Sharma, A.; Schwemling, P.; Pangaud, P.; Wang, T.

doi:10.1088/1748-0221/15/02/P02005

Journal Article

PUBDB-2021-00243

Mini-MALTA: Radiation hard pixel designs for small-electrode monolithic CMOS sensors for the High Luminosity LHC

Dyndal, M. ; Dao, V.Extern* ; Allport, P. ; Asensi Tortajada, I. ; Barbero, M. ; Bhat, S. ; Bortoletto, D. ; Berdalovic, I. ; Bespin, C. ; Buttar, C. ; Caicedo, I. ; Cardella, R. ; Dachs, F. ; Degerli, Y. ; Denizli, H. ; Flores Sanz de Acedo, L. ; Freeman, P. ; Gonella, L. ; Habib, A. ; Hemperek, T. ; Hirono, T. ; Hiti, B. ; Kugathasan, T. ; Mandić, I. ; Maneuski, D. ; Mikuž, M. ; Moustakas, K. ; Munker, M. ; Oyulmaz, K. Y. ; Pangaud, P. ; Pernegger, H. (Corresponding author)Extern* ; Piro, F. ; Riedler, P. ; Sandaker, H. ; Schioppa, E. J. ; Schwemling, P. ; Sharma, A. ; Simon Argemi, L. ; Solans Sanchez, C. ; Snoeys, W. ; Suligoj, T. ; Wang, T. ; Wermes, N. ; Worm, S.DESY*

2020
Inst. of Physics London

Journal of Instrumentation 15(02), P02005 (2020) [10.1088/1748-0221/15/02/P02005]

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Please use a persistent id in citations: doi:10.1088/1748-0221/15/02/P02005 doi:10.3204/PUBDB-2021-00243

Report No.: arXiv:1909.11987

Abstract: Depleted Monolithic Active Pixel Sensor (DMAPS) prototypes developed in the TowerJazz 180 nm CMOS imaging process have been designed in the context of the ATLAS upgrade Phase-II at the HL-LHC. The pixel sensors are characterized by a small collection electrode (3 μm) to minimize capacitance, a small pixel size (36.4× 36.4 μm$^2$), and are produced on high resistivity epitaxial p-type silicon. The design targets a radiation hardness of 1×10$^{15}$ 1 MeV n$_{eq}$/cm$^2$, compatible with the outermost layer of the ATLAS ITK Pixel detector. This paper presents the results from characterization in particle beam tests of the Mini-MALTA prototype that implements a mask change or an additional implant to address the inefficiencies on the pixel edges. Results show full efficiency after a dose of 1×10$^{15}$ 1 MeV n$_{eq}$/cm$^2$.

Keyword(s): semiconductor detector: pixel ; pixel: size ; semiconductor detector: design ; radiation: damage ; electrode: design ; ATLAS: upgrade ; efficiency ; n: irradiation ; performance ; electronics: readout ; noise ; measurement methods

Classification:

ddc:610

Contributing Institute(s):

Z_DET (Z_DET)

Research Program(s):

632 - Detector technology and systems (POF3-632) (POF3-632)

Experiment(s):

No specific instrument

Appears in the scientific report 2020

Database coverage:
Medline

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