guest ::
| Home > Publications database > Concept and Development of Enhanced Lateral Drift (ELAD) Sensors |
| Home > Publications database > Concept and Development of Enhanced Lateral Drift (ELAD) Sensors |
| Book/Dissertation / PhD Thesis | PUBDB-2020-02268 |
; ;
2020
Verlag Deutsches Elektronen-Synchrotron
Hamburg
This record in other databases:
Please use a persistent id in citations: doi:10.3204/PUBDB-2020-02268
Report No.: DESY-THESIS-2020-014
Abstract: In this dissertation the concept of a new type of silicon tracking sensor called Enhanced Lateral Drift (ELAD) sensor is presented. This technology is created to meet the requirements for future linear e+e− colliders vertex and tracking detectors. To date, there are two projects for future linear colliders, ILC and CLIC. The physics goals at both experiments demand a lightweight silicon vertex detector and a large area silicon tracker. A spatial resolution of a few micrometres and material budget less than two percent of a radiation length per layer are required.For the ELAD sensors the spatial resolution of the impact position of ionising particles is improved by a dedicated charge sharing mechanism, which is achieved by an inhomogeneous electric field in the lateral direction in the sensor bulk. The inhomogeneous electric field is created by buried doping implants with a higher concentration with respect to the background concentration of the bulk.Electric field simulations based on Technology Computer-Aided Design (TCAD) have been carried out for 2D and 3D geometries as well as transient simulations with a traversing particle for the 2D. The electric field profiles have been further optimised regarding the resulting position resolution. The simulations show a strong dependence of the charge sharing mechanism on the concentrations of the buried implant. Optimal values for this concentration enable a nearly linear charge sharing between two neighbouring readout electrodes as a function of the impact position.To estimate the position resolution of an ELAD sensor, test beam simulations using the AllPix2 software have been performed applying the realistic electric field profiles from the TCAD simulations. In the AllPix2 simulations 2D and 3D electric fields have been used. Results of the geometry optimisation are shown realising an optimal charge sharing and hence position resolution. The position resolution of a few micrometers is expected by using deep implants.A description of the multi-layer production process is given. It represents a new production technique allowing for deep bulk engineering.
|
The record appears in these collections: |
PDF
PDF (PDFA)