Development and simulations of Enhanced Lateral Drift Sensors

Velyka, A.; Jansen, H.

doi:10.1088/1748-0221/14/05/C05005

Report/Journal Article

PUBDB-2019-02228

Development and simulations of Enhanced Lateral Drift Sensors

Velyka, A. (Corresponding author)DESY* ; Jansen, H.DESY*

2019
Inst. of Physics London

9th International Workshop on Semiconductor Pixel Detectors for Particles and Imaging, Pixel 2018, Taipei, Taiwan, 10 Dec 2018 - 14 Dec 2018 Journal of Instrumentation 14(05), C05005 (2019) [10.1088/1748-0221/14/05/C05005]

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Please use a persistent id in citations: doi:10.1088/1748-0221/14/05/C05005 doi:10.3204/PUBDB-2019-02228

Report No.: DESY-19-081; arXiv:1905.03119

Abstract: We present the concept of a new type of silicon tracking sensor called Enhanced Lateral Drift (ELAD) sensor. In ELAD sensors the spatial resolution of the impact position of ionising particles is improved by a dedicated charge sharing mechanism, which is achieved by a non-homogeneous electric field in the lateral direction in the sensor bulk. The non-homogeneous electric field is created by buried doping implants with a higher concentration with respect to the background concentration of the bulk. The resulting position-dependent charge sharing allows for an improved interpolation of the impact position. TCAD-based electric field simulations for 2D and 3D geometries as well as transient simulations with a traversing particle for the 2D geometry have been carried out.The electric field profiles have further been optimised for position resolution.The simulations show a strong dependence of the charge sharing mechanism on the buried implant concentration.Optimal values for the buried implant concentration allow for nearly linear charge sharing between two readout electrodes as a function of the impact position.Additionally, the foreseen production technique combining silicon epitaxy and ion beam implantation is outlined.

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