| Home > Publications database > Octave-spanning coherent supercontinuum generation in silicon on insulator from 1.06 μm to beyond 2.4 μm |
| Journal Article | PUBDB-2018-00770 |
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2018
Nature Publishing Group
London
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Please use a persistent id in citations: doi:10.1038/lsa.2017.131 doi:10.3204/PUBDB-2018-00770
Abstract: Efficient complementary-metal-oxide-semiconductor-based nonlinear optical devices in the near infrared are in strong demand. Due to two-photon absorption in silicon, however, much nonlinear research is shifting towards unconventional photonics platforms. In this work, we demonstrate the generation of an octave-spanning coherent supercontinuum in a silicon waveguide covering the spectral region from the near- to shortwave-infrared. With input pulses of 18 pJ in energy, the generate d signal spans the wavelength range from the edge of the silicon transmission window, approximately 1.06 μm to beyond 2.4μm, with a −20 dB bandwidth covering 1.124 - 2.4μm. An octave-spanning supercontinuum was also observed at the energy levels as low as 4 pJ (-35 dB bandwidth). We also measured the coherence over an octave, obtaining $|g_{12}^{(1)}(\lambda)|$ in good agreement with the simulations. Additionally, we demonstrate optimization of the third-or der dispersion of the waveguide to strengthen the dispersive wave and discuss the advantage of having a soliton at the long wavelength edge of an octave-spanning sign al for nonlinear applications. This research paves the way for applications, such as chip -scale precision spectroscopy, optical coherence tomography, optical frequency metrology, frequency synthesis and wide-band wavelength division multiplexing in the telecom window.
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