A Two-Tier Monolithically Stacked CMOS Active Pixel Sensor to Measure Charged Particle Direction

Passeri, Daniele; Placidi, P.; Meroli, S.; Servoli, L.; Magalotti, D.; Marras, A.

doi:10.1088/1748-0221/9/05/C05038

Journal Article

PUBDB-2015-01199

A Two-Tier Monolithically Stacked CMOS Active Pixel Sensor to Measure Charged Particle Direction

Passeri, D. (Corresponding author) ; Servoli, L. ; Meroli, S. ; Magalotti, D. ; Placidi, P. ; Marras, A.DESY*

2014
Inst. of Physics London

Journal of Instrumentation 9(05), C05038 (2014) [10.1088/1748-0221/9/05/C05038]

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Please use a persistent id in citations: doi:10.1088/1748-0221/9/05/C05038

Abstract: In this work we present an innovative approach to particle tracking based on CMOSActive Pixel Sensors (APS) layers, monolithically integrated in an all-in-one chip featuring multiple,stacked, fully functional detector layers capable to provide momentum measurement (particledirection) within a single detector by using multiple layer impact point coordinates. The wholesystem will results in a very low material detector, since each layer can be thinned down to tensof micrometres, thus dramatically reducing multiple scattering issues. To build such a detector, werely on the capabilities of the CMOS vertical scale integration (3D-IC) 130 nm Chartered/Tezzarontechnology, used to integrate two fully-functional CMOS APS matrix detectors, including bothsensing area and control/signal elaboration circuitry, stacked in a monolithic device by means ofThrough Silicon Via (TSV) connections. Such a detector would allow accurate estimation of theimpact point of an ionizing particle and of its incidence angle. Two batches of the first chip prototypehave been produced and characterized using particle beams (e.g. protons) demonstrating thesuitability of particle direction measurement with a single, multiple layers, 3D vertically stackedAPS CMOS detector.

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