Journal Article

PUBDB-2014-04169

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Epitaxial, well-ordered ceria/lanthana high-k gate dielectrics on silicon

Flege, J. I. (Corresponding Author)Extern* ; Kaemena, B. ; Schmidt, T.Extern* ; Falta, J.Extern*

2014
Inst. New York, NY

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Please use a persistent id in citations: doi:10.1116/1.4876122

Abstract: It is shown that the growth of epitaxial lanthana films on silicon may be achieved by substrate prepassivation using an atomic layer of chlorine, which prevents silicon oxide and silicate formation at the oxide–silicon interface. Postdeposition of two layers of cerium oxide facilitates the healing of structural defects within the La2O3 film, strongly increasing its crystallinity at the expense of a slightly more oxidized interfacial layer below. Together, the approach of combining Cl prepassivation and the ceria overgrowth results in an epitaxial, high-quality ceria/lanthana gate stack suitable for high-k integration in a gate-last process.

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Contributing Institute(s):

1. DOOR-User (DOOR)

Research Program(s):

1. DORIS Beamline BW1 (POF2-54G13) (POF2-54G13)

Experiment(s):

1. DORIS Beamline BW1 (DORIS III)

Appears in the scientific report 2014

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Database coverage:
; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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